| Etch Chemistry | Films | E/R Per Minute +/-10% | Temperature |
|---|---|---|---|
| Pre-Mixed BOE 7:1 | Thermal Oxide | 800A | 22C - 24C |
| Pre-Mixed BOE 7:1 | PECVD SiH4 Oxide | 1200A | 22C - 24C |
| Pre-Mixed BOE 7:1 | PECVD TEOS | 1500A | 22C - 24C |
| Pre-Mixed BOE 7:1 | LPCVD Nitride | 150A | 22C - 24C |
| Pre-Mixed BOE 10:1 | Thermal Oxide | 570A | 22C - 24C |
| Pre-Mixed HF 10:1 | Thermal Oxide | 330A | 22C - 24C |
| Pre-Mixed HF 100:1 | Thermal Oxide | 32A | 22C - 24C |
| Chromium Etchant | Chrome | 700A +/-100A | 22C - 24C |
| Pre-Mixed ITO Etchant | Indium Tin Oxide | 150A +/-50A | 22C - 24C |
| Pre-Mixed Polysilicon Etchant | Polysilicon | 5000A | 22C - 24C |
| Pre-Mixed Aluminum Etchant | Aluminum/Aluminum Cu | Dependent on temperature | 30C - 60C |
| KOH (32%) | Polysilicon | 5000A | 80C |
| KOH (32%) | Silicon (Bulk) | 8000A | 80C |
| TMAH (25%) | Silicon (Bulk) | 4000A | 80C |
| 10:1 H2O2/NH4OH | W/TiW/TiN | 120A | 22C-24C |
