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Thin Film Dielectric PECVD

PECVD (Plasma Enhanced Chemically Evaporated Deposition) are useful low temperature dielectrics that offer many applications ability to isolate metal layers

PECVD

PECVD (Plasma Enhanced Chemically Evaporated Deposition) are useful Low Temperature dielectrics that offer many applications ability to isolate metal layers, while maintaining low temperature over a specific metal. PECVD offers flexible single sided depositions over a wide range of materials.  Used in Semiconductor, Bio-Medical, MEMS and many more applications.

Low Temperature PECVD SiO2 (Silane Based) (R.I. 1.5 +/-0.3) 380 Degree C
400A-5KA     +/-5%
5KA-10KA +/-5%
10KA-20KA +/-5%

Round Substrates

50mm2 inch
100mm4 inch
125mm5 inch
150mm6 inch
200mm8 inch

Square Substrates

156mm X 156mm & Smaller

Coupons can be run on a carrier wafer

Note:

  1. Pure Wafer utilizes a Variable, Dual Frequency Tool: 1250W @>1300 MHZ/750W @100-400 kHz.
  2. All film deposition as measured on a silicon test wafer.
Multi-sack depositions are measured on the individual film, utilizing a test wafer,
  3. A uniformity map will be provided for each film.
Pure Wafer is responsible for the film deposition, uniformity and thickness.
  4. Pure Wafer is not responsible for results of multi-stack depositions.
R.I. as measured on bare test wafers for 1KA thickness.
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